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TPCP8J01
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) Silicon NPN Epitaxial Type
TPCP8J01
Notebook PC Applications Portable Equipment Applications
0.330.05
Unit: mm
0.05 M A
8 5
* * * * * *
Lead(Pb)-Free Small mounting area due to small and thin package Low drain-source ON resistance: P Channel RDS (ON) = 27 m (typ.) High forward transfer admittance: P Channel |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = -10 A (VDS = -32 V) Enhancement-mode: P Channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
2.40.1
0.475
1 4
B A
0.65 2.90.1
0.05 M B
0.80.05
Maximum Ratings (Ta = 25C) MOSFET
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Rating -32 -32 20 -5.5 -22 2.14 Unit V V V A
S
0.025
S
0.170.02
0.28 +0.1 -0.11
1.12 -0.12 1.12 -0.12 0.28 +0.1 -0.11
+0.13
+0.13
1Emitter 2Drain 3Drain 4Drain
5Source 6Gate 7Base 8Collector
JEDEC JEITA TOSHIBA
2-3V1G
Drain power dissipation
W
Weight: 0.011 g (typ.)
1.06 W
Circuit Configuration
8 7 6 5
5.8 -3 0.21
mJ A mJ
R1 R2
BRT
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC (Note 1) Symbol VCBO VCEO VEBO IC PC Rating 50 50 6 100 200 Unit V V V mA mW
1
2
2.80.1
3
4
Marking (Note5)
8 7 6 5
Collector power dissipation
Common Maximum Ratings (Ta=25C )
Characteristics Junction temperature Storage temperature range Symbol TJ Tstg Rating 150 -55~150 Unit C C
8J01
1 2 3
Lot No.
4
This transistor is an electrostatic-sensitive device. Handle with caution. Note: For Notes 1 to 5, refer to the next page.
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TPCP8J01
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Symbol Rth (ch-a) Max 58.4 Unit C/W
Thermal resistance, channel to ambient (t = 5 s) (Note 2b)
Rth (ch-a)
117.9
C/W
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = -24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = -3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: "*" on the lower left of the marking indicates Pin 1. Weekly code (three digits): Week of manufacture (01 for the first week of the year, continues up to 52 or 53) Year of manufacture (The last digit of the calendar year)
.
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Electrical Characteristics (Ta = 25C) MOSFET
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 4.7 0V VGS -10 V ID = -3.0 A VOUT RL = 5 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -32 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = - 1mA VGS = -4 V, ID = -3.0 A VGS = -10 V, ID = -3.0 A VDS = -10 V, ID = -3.0 A Min -32 -15 -0.8 4.8 Typ. 38 27 9.6 1760 200 210 2.8 12 22 90 34 4.7 7.2 Max 10 -10 -2.0 49 35 ns nC pF Unit A A V V m S
VDD -15 V - Duty < 1%, tw = 10 s =
VDD -24 V, VGS = -10 V, - ID = -5.5 A
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current (Pulse) (Note 1) Forward voltage (diode) Symbol IDRP VDSF Test Condition IDR = -5.5 A, VGS = 0 V Min Typ. Max -22 1.2 Unit A V
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TPCP8J01
BRT
Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Transition frequency Collector output capacitance Input resistor Resistor ratio Symbol ICBO ICEO IEBO hFE VCE (sat) VI (ON) VI (OFF) fT Cob R1 R1/R2 Test Condition VCB = 50 V, IE = 0 VCB = 50 V, IE = 0 VEB = 6 V, IC= 0 VCE = 5 V, IC= 10 mA IC = 5 mA, IB = 0.25 mA VCE = 0.2 V, IC = 5 mA VCE = 5 V, IC = 0.1 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz Min 0.081 80 0.7 0.5 7 0.191 Typ. 0.1 250 3 10 0.213 Max 100 100 0.15 0.3 1.8 1.0 6 13 0.232 V V V MHz pF k mA Unit nA
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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